vishay siliconix SUD19P06-60 document number: 69253 s11-2132 rev. b, 31-oct-11 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 60 v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % uis tested ? compliant to rohs directive 2002/95/ec applications ? high side switch for full bridge converter ? dc/dc converter for lcd display notes: a. duty cycle ?? 1 %. b. when mounted on 1" square pcb (fr-4 material). c. see soa curve for voltage derating. d. based up on t c = 25 c. product summary v ds (v) r ds(on) ( ? ) i d (a) d q g (typ) - 60 0.060 at v gs = - 10 v - 19 26 0.077 at v gs = - 4.5 v - 16.8 absolute maximum ratings (t a = 25 c, unless otherwise note) parameter symbol limit unit drain-source voltage v ds - 60 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 18.3 a t c = 125 c - 8.19 pulsed drain current i dm - 30 avalanche current, single pulse l = 0.1 mh i as - 22 repetitive avalanche energy, single pulse a e as 24.2 mj power dissipation t c = 25 c p d 38.5 c w t a = 25 c 2.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c to-252 s gd to p v ie w drain connected to ta b s g d p-channel mosfet orderin g information: SUD19P06-60-e3 (lead (p b )-free) SUD19P06-60-ge3 (lead (p b )-free and halogen free) thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b t ? 10 s r thja 17 21 c/w steady state 45 55 maximum junction-to-case r thjc 2.7 3.25
www.vishay.com 2 document number: 69253 s11-2132 rev. b, 31-oct-11 vishay siliconix SUD19P06-60 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise note) parameter symbol test conditions min . typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 60 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 60 v, v gs = 0 v - 1 a v ds = - 60 v, v gs = 0 v, t j = 125 c - 50 v ds = - 60 v, v gs = 0 v, t j = 150 c - 125 on-state drain current a i d(on) v ds ? - 5 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 10 a 0.048 0.060 ? v gs = - 10 v, i d = - 10 a, t j = 125 c 0.102 v gs = - 10 v, i d = - 10 a, t j = 150 c 0.120 v gs = - 4.5 v, i d = - 5 a 0.061 0.077 forward transconductance a g fs v ds = - 15 v, i d = - 10 a 22 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1 mhz 1140 1710 pf output capacitance c oss 130 reverse transfer capacitance c rss 90 total gate charge c q g v ds = - 30 v, v gs = - 10 v, i d = - 10 a 26 40 nc gate-source charge c q gs 4.5 gate-drain charge c q gd 7 gate resistance r g f = 1 mhz 7 ? tu r n - o n d e l ay t i m e c t d(on) v dd = - 30 v, r l = 3 ? i d ? - 19 a, v gen = - 10 v, r g = 2.5 ? 815 ns rise time c t r 915 turn-off delay time c t d(off) 65 100 fall time c t f 30 45 drain-source body diode and characteristics (t c = 25 c) b continuous current i s - 30 a pulsed current i sm - 30 forward voltage a v sd i f = - 19 a, v gs = 0 v - 1 - 1.5 v reverse recovery time t rr i f = - 19 a, di/dt = 100 a/s 41 61 ns
document number: 69253 s11-2132 rev. b, 31-oct-11 www.vishay.com 3 vishay siliconix SUD19P06-60 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics transconductance capacitance 0 5 10 15 20 25 30 0246 8 10 v ds -) v ( e g a t l o v e c r u o s - o t - n i a r d 3 v v gs = 10 thr u 5 v 4 v i d - drain c u rrent (a) v gs - gate-to-so u rce v oltage ( v ) - transcond u ctance (s) g fs 25 c 0 5 10 15 20 25 30 35 0 5 10 15 20 25 30 t c = - 55 c 125 c 0 300 600 900 1200 1500 1 8 00 0 102030405060 v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs - gate-to-so u rce v oltage ( v ) 25 c - 55 c t c = 125 c i d - drain c u rrent (a) 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 0 5 10 15 20 25 30 - on-resistance ( ) i d - drain c u rrent (a) r ds(on) v gs = 10 v v gs = 4.5 v 0 4 8 12 16 20 0 1020304050 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 30 v i d = 10 a
www.vishay.com 4 document number: 69253 s11-2132 rev. b, 31-oct-11 vishay siliconix SUD19P06-60 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) thermal ratings on-resistance vs. junction temperature 0.4 0.7 1.0 1.3 1.6 1.9 - 50 - 25 0 25 50 75 100 125 150 - on-resistance r ds(on) i d = 10 a v gs = 10 v t j - j u nction temperat u re (c) (normalized) source-drain diode forward voltage 0.0 0.3 0.6 0.9 1.2 1.5 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 40 10 1 t j = 25 c t j = 150 c maximum drain current vs. case temperature 0 5 10 15 20 25 0 25 50 75 100 125 150 - drain current (a) i d t c - case temperature (c) safe operating area 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 - drain c u rrent (a) i d 1 s dc v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 100 ms 10 s t c = 25 c single p u lse limited b y r ds(on) * b v dss limited normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 s qu are w a v e p u lse d u ration (sec) n ormalized effecti v e transient thermal impedance
vishay siliconix SUD19P06-60 document number: 69253 s11-2132 rev. b, 31-oct-11 www.vishay.com 5 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69253 . normalized thermal transient impedance, junction-to-case 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 n ormalized effecti v e transient thermal impedance 100 0.2 0.1 0.05 0.02 d u ty cycle = 0.5 single p u lse 10 s qu are w a v e p u lse d u ration (sec)
package information www.vishay.com vishay siliconix revision: 16-may-16 1 document number: 71197 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-252aa case outline notes ? dimension l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 4.10 - 0.161 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.01 1.52 0.040 0.060 ecn: t16-0236-rev. p, 16-may-16 ? dwg: 5347
application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
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